陈少川，博士，北京大学信息工程学院助理教授、博士生导师，国家高层次青年人才。于德国亚琛工业大学获得工学博士学位。长期从事新型电子材料及器件的研究和应用，主要研究兴趣包括基于氧化物和二维层状材料的阻变存储器原理、器件设计、性能优化和可靠性研究。相关成果发表在Nature Electronics、Nature Communications、Advanced Materials、Nano Letters等国际学术期刊。曾获日本国立材料研究所（NIMS）ICYS Research Fellowship、日本学术振兴会（JSPS）青年研究资助、IEEE电子器件协会EDS PhD Student Fellowship等。

欢迎对微纳电子器件、材料、物理、集成技术等方向感兴趣的学生和博士后加入。

2026–至今：北京大学，信息工程学院，助理教授

2024–2025：日本国立材料研究所，国际青年科学家中心，ICYS研究员

2019–2023：德国亚琛工业大学，电气工程与信息技术学院，博士

1.S. Chen, Z. Yang, H. Hartmann, A. Besmehn, Y. Yang, I. Valov, Electrochemical ohmic memristors for continual learning.Nat.Commun.16,2348(2025).

2.F. Michieletti^#,S. Chen^#, C. Weber, C. Ricciardi, T. Ohno, I. Valov, Influence of active electrode impurity on memristive characteristics of ECM devices.J.Solid State Electrochem.28,1735–1741(2024).

3.D. Sun, X. Zhu,S. Chen*, H. Fang, G. Zhu, G. Lan, L. He, Y. Shi*, Uniformity, Linearity, and Symmetry Enhancement in TiO_x/MoS_2–xO_xBased Analog RRAM via S-Vacancy Confined Nanofilament.NanoLett. 24, 16283–16292 (2024).

4.S. Chen, T. Zheng, S. Tappertzhofen, Y. Yang and I. Valov, Electrochemical-Memristor-Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges.Adv.Mater. 35, 2301924 (2023).

5.S. Chen, I. Valov, Design of Materials Configuration for Optimizing Redox-based Resistive Switching Memories.Adv.Mater. 34, 2105022 (2022).

6.S. Chen, M. R. Mahmoodi, Y. Shi, C. Mahata, B. Yuan, X. Liang, C. Wen, F. Hui, D. Akinwande, D. B. Strukov, M. Lanza, Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks.Nat.Electron. 3, 638–645 (2020). (Cover paper)

7.S. Chen, S. Noori, M. A. Villena, Y. Shi, T. Han, Y. Zuo, M. Pedeferri, D. Strukov, M. Lanza, M. V. Diamanti, Memristive Electronic Synapses Made by Anodic Oxidation.Chem.Mater. 31, 8394–8401 (2019). (Cover paper)

8.D.Sun, S.Zhao, L.Jiang, G.Lan, X.Deng, W.Fang,S.Chen,Y.Shi, Hybrid optoelectronic encoding in ZnO thin film transistors for multimodal physical reservoirs.J.Phys.D:Appl.Phys.59(5),055101(2026).

9.D. Sun, A. Li, X. Deng, S. Zhao, Z. Xu, Q. Tan, Y. Wan, X. Li,S. Chen, I. Valov, Y. Shi, Dynamic Monolayer WSe2 Electrolyte-Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical Reservoir Computing.Small, 2504066(2025).

10.D.- Y. Cho, K.-J. Kim, K.-S. Lee, M. Luebben,S. Chen, I. Valov, Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches.ACSAppl.Mater.Interfaces15, 18528–18536 (2023).

11.T.Frahm, M Buttberg, G.Gvozdev, R.A.Müller,S.Chen, B.Sun, L.Raffauf, S.Menzel, I.Valov, D.Wouters, R.Waser, J.Knoch,Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems.IEEE J.Electron Devices Soc. 11, 432–437 (2023).