Supervisor and Research Areas:
Dr. Shaochuan Chen is currently anAssistant Professor at the School ofElectronic and ComputerEngineeringofPeking University.He is arecipientof National Science Fund for Excellent Young Scholars (Overseas). He received his Ph.D. inElectricalEngineering from RWTH Aachen University in Germany. His researchinterests are novel materials and electron devices, with a focus onresistive switching memory technologies, including fundamental studies on resistive switchingdevicesbased on oxides and two-dimensional layered materials, as well as device design and optimization, characterization, and reliability studies.His workhasbeen published in top journals includingNature Electronics,Nature Communications, Advanced Materials, and Nano Letters. He has received the ICYS Research Fellowship from the National Institute for Materials Science (NIMS) in Japan, the JSPSKakenhiGrant-in-Aid for Early-Career Scientists, and the IEEE Electron DevicesSociety (EDS) PhD Student Fellowship.
Prospective students:
Students interested in nanoelectronics,electronmaterials, physics, and integration technologies are welcometo apply for master and Ph.D. programs. We welcome the internationalstudentsto apply forPeking University International Summer Lab Research Program.
Research Experience:
2026 – Present: Peking University, School ofElectronic and ComputerEngineering, Assistant Professor
2024 – 2025: National Institute for Materials Science (NIMS), International Center for Young Scientists (ICYS), ICYS ResearchFellow
2019 – 2023: RWTH Aachen University, Faculty of Electrical Engineering and Information Technology, PhD
Main research papers:
1.S. Chen, Z. Yang, H. Hartmann, A. Besmehn, Y. Yang, I. Valov, Electrochemical ohmic memristors for continual learning.Nat.Commun.16,2348(2025).
2.F. Michieletti#,S. Chen#, C. Weber, C. Ricciardi, T. Ohno, I. Valov, Influence of active electrode impurity on memristive characteristics of ECM devices.J.Solid State Electrochem.28,1735–1741(2024).
3.D. Sun, X. Zhu,S. Chen*, H. Fang, G. Zhu, G. Lan, L. He, Y. Shi*, Uniformity, Linearity, and Symmetry Enhancement in TiOx/MoS2–xOxBased Analog RRAM via S-Vacancy Confined Nanofilament.NanoLett. 24, 16283–16292 (2024).
4.S. Chen, T. Zheng, S. Tappertzhofen, Y. Yang and I. Valov, Electrochemical-Memristor-Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges.Adv.Mater. 35, 2301924 (2023).
5.S. Chen, I. Valov, Design of Materials Configuration for Optimizing Redox-based Resistive Switching Memories.Adv.Mater. 34, 2105022 (2022).
6.S. Chen, M. R. Mahmoodi, Y. Shi, C. Mahata, B. Yuan, X. Liang, C. Wen, F. Hui, D. Akinwande, D. B. Strukov, M. Lanza, Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks.Nat.Electron. 3, 638–645 (2020). (Cover paper)
7.S. Chen, S. Noori, M. A. Villena, Y. Shi, T. Han, Y. Zuo, M. Pedeferri, D. Strukov, M. Lanza, M. V. Diamanti, Memristive Electronic Synapses Made by Anodic Oxidation.Chem.Mater. 31, 8394–8401 (2019). (Cover paper)
8.D.Sun, S.Zhao, L.Jiang, G.Lan, X.Deng, W.Fang,S.Chen,Y.Shi, Hybrid optoelectronic encoding in ZnO thin film transistors for multimodal physical reservoirs.J.Phys.D:Appl.Phys.59(5),055101(2026).
9.D. Sun, A. Li, X. Deng, S. Zhao, Z. Xu, Q. Tan, Y. Wan, X. Li,S. Chen, I. Valov, Y. Shi, Dynamic Monolayer WSe2 Electrolyte-Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical Reservoir Computing.Small, 2504066(2025).
10.D.- Y. Cho, K.-J. Kim, K.-S. Lee, M. Luebben,S. Chen, I. Valov, Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches.ACSAppl.Mater.Interfaces15, 18528–18536 (2023).
11.T.Frahm, M Buttberg, G.Gvozdev, R.A.Müller,S.Chen, B.Sun, L.Raffauf, S.Menzel, I.Valov, D.Wouters, R.Waser, J.Knoch,Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems.IEEE J.Electron Devices Soc. 11, 432–437 (2023).
