• 张立宁

  • 职称:助理教授

  • 电话:0755-26038893,办公室:A423

  • Email:eelnzhang@pku.edu.cn,lnzhang@ieee.org

研究方向:新型逻辑及存储器件、电子设计自动化 EDA、神经形态器件和计算系统。

导师与研究领域、方向:

西安交通大学  电子科学与技术     学士

香港科技大学  电子及计算机工程    博士

麦吉尔大学   物理系          访问学者

香港科技大学  电子及计算机工程   研究助理教授 (至2017.12)

深圳大学     电子科学与技术    副教授 (至2020.03)

研究领域为模型驱动的下一代计算系统,涉及新型微纳尺度半导体器件的物理、器件模型和电路模拟方法、电路系统的可靠性、电子设计自动化EDA、神经形态器件和计算系统。目前开展的课题包括先进工艺节点CMOS器件建模、新型逻辑和存储器件、神经形态器件、电路模拟器的动态时间演进算法和模型降阶算法、神经形态电路EDA等。

IEEE Senior Member, IEEE EDS Technical Committee Member (Compact Modeling), 国际会议IEEE EDTM 技术委员会成员/分会主席,IEEE JEDS 客座编辑(2018)。获得IEEE EDSSC最佳论文奖(2019)William Mong纳米科学与技术杰出论文奖(2012)等。指导学生获得IEEE EDSSC最佳学生论文奖(2018)

近年来取得的主要成果:

专著/章节:

[1] Lining Zhang and Mansun Chan, Book Editors, Tunneling Field-Effect Transistor Technology, Springer, 2016

[2] Lining Zhang, Jun Huang, Mansun Chan, “Steep Slope Devices and TFETs,” Chapter 1 of Tunneling Field Effect Transistor Technology, Springer, 2016, pp. 1-31.

代表性期刊文章:

[1] X. Huang, X. Chen, L. Li, H. Zhong, Y. Jiao, X. Lin, Q. Huang, Lining Zhang*, Ru Huang, “A dynamic current model for MFIS negative capacitance transistors,” IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3665-3671, July 2021

[2] Z. Huang, S. Xiong, N. Dong, Lining Zhang, X. Lin, “A Study of the gate-stack small-signal model and determination of interface traps in GaN-based MIS-HEMT,” IEEE Trans. Electron Devices, vol. 67, no. 4, pp. 1507-1512, Apr. 2021

[3] Z. Ma, Lining Zhang*, C. Zhou, M. Chan, “High current Nb-doped P-channel MoS2 field-effect transistor using Pt contact,” IEEE Electron Device Letter, vol. 42, no. 3, pp. 343-346, Mar. 2021

[4] X. Chen, F. Hu, X. Huang, W. Cai, M. Liu, C. Lam, X. Lin, Lining Zhang*, M.Chan, “A SPICE model of phase change memory for neuromorphic circuits,” IEEE Access, vol. 8, pp.95278-95287, May 2020

[5] Z. Rong, W. Cai, Y. Zhang, P. Wu, X. Li, Lining Zhang*, “On the enhanced Miller capacitance of source- gated thin film transistors,” IEEE Electron Device Letter, vol.41, no.5, pp. 741-744, May 2020

[6] Z. Ahmed, Q. Shi, Z. Ma, Lining Zhang*, H. Guo, M. Chan, “Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations,” IEEE Electron Device Letter, vol. 41, no. 1, pp. 171-174, Jan. 2020

[7] H. Hu, D. Liu, X. Chen, D. Dong, X. Cui, M. Liu, X. Lin, Lining Zhang*, M. Chan, “A compact phase change memory model with dynamic state variables,” IEEE Trans. Electron Devices, vol. 67, no. 1, pp. 133-139, Jan. 2020

[8] Lining Zhang*, L. Wang, W. Wu, M. Chan, “Modeling Current–Voltage Characteristics of Bilayer Organic Light-Emitting Diodes,” IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 139-145, Jan. 2019

[9] Lining Zhang*, C. Ma, Y. Xiao, H. Zhang, X. Lin, M. Chan, “A dynamic time evolution method for concurrent device-circuit aging simulations,” IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 184-190, Jan. 2019

代表性会议文章:

[1] Qing Shi, Lining Zhang*, Yu Zhu, Lei Liu, Mansun Chan, Hong Guo, “Atomic disorder scattering in emerging transistors by parameter-free first principle modeling,’ 2014 IEEE International Electron Device Meeting (IEDM), Dec. 15-17, 2014, San Francisco, USA

[2] Lining Zhang*, Jin He and Mansun Chan, “A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors”, 2012 IEEE International Electron Device Meeting (IEDM), Dec. 10-12, 2012, San Francisco, USA

[3] H. Hu, Lining Zhang, X. Lin, M. Chan, “Modeling the heating effects in PCM for circuit simulation accelerations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.12-14, 2019, Xi’an, China [Best Paper Award]

[4] D. Song, Lining Zhang*, D. Liu, H. Zhang, X. Lin, “An improvement of BSIM for fast circuit simulations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.6-8, 2018, Shenzhen, China [Best Student Paper Award]

[5] P. Wu, C. Ma, Lining Zhang*, X. Lin, M. Chan, “Investigation of nitrogen enhanced NBTI effect using the universal prediction model,” 2015 International Reliability Physics Symposium (IRPS), Apr. 19 –23, Monterey, USA

博士后招收:

诚招相关方向的博士后进行合作研究。详见学院网站的招聘启事。

对计划招收研究生的基本要求:

1、专业范围: 微电子,物理,数学,计算机;

2、乐观、主观能动性、对解决工程问题有好奇心、有团队合作精神