• 张冠张

  • 职称:助理教授

  • 电话:0755-26033013;办公室:A314

  • Email:kcchang@pkusz.edu.cn

  • 实验室网站:http://web.pkusz.edu.cn/smedl/

研究方向:1. 阻变存储器 ;2. 超临界流体 ;3. 类神经型态器件 ;4.GaN器件 ;5.生物器件 ;6.薄膜晶体管。

导师与研究领域、方向:

  • 北京大学深圳研究生院      信息工程学院       助理教授(博导)

  • 国立中山大学           材料与光电学系      博士后研究员

  • 国立中山大学           材料与光电学系      博士

  • (导师:施敏 院士 美国国家工程院、中国工程院外籍院士)

  • 东海大学              化学系           学士

  本人近年来致力于各类新型电子器件的研发及其物理机制的探讨,并首创运用超临界流体技术修复材料和改善器件性能。目前研究的主要内容包括:

1.阻变存储器件(器件与电路集成):研究包括材料选择、器件结构优化设计、理论模型。实现的阻变存储器的性能和可靠性达到了世界最先进水平。同时也不断深化与产业界相关合作,共同推进阻变存储器在更多领域的进步和发展。

2.超临界流体技术(微纳电子器件修饰):超临界流体态是一种介于液体和气体之间的物质的第四相态,利用交叉学科的背景优势,深入开展了超临界流体与电子器件和材料之间的一系列研究,成功修复包括RRAM、TFT、GaN、HEMT、CNT等在内的多种器件内部缺陷(尤其对制备完成之后的器件依然有效)、修饰了材料的特性。研究主题不仅致力于创新性,同时兼顾绿色环保和可持续发展,并且有多项应用技术突破。

3.类神经形态器件(器件与应用集成):研究开发多种基于晶体管的具有类神经突触特性的器件,对神经形态的各类可塑性进行深入探讨,同时开发先进神经形态算法,在软硬件结合方式下,以最低的功耗和代价实现对人脑神经网络的模拟。

4.先进显示(微显示芯片与集成):开发高性能的薄膜晶体管的制备工艺和优化条件,多方位提升薄膜晶体管的性能,以匹配其在先进显示领域的应用。

5.GaN器件:研究包括宽禁带材料GaN(氮化镓)、SiC(碳化硅)器件物理、结构与工艺。

6.生物电子集成(生物可兼容性器件):研究开发基于各类生物材料、生物兼容的材料的电子器件,并应用在仿生、能源、传感等领域。

讲授课程:

1. 半导体器件与工艺

2. 半导体测试与分析

承担的代表性项目:

1. 国家自然科学基金面上项目(2020.01-2024.12)

2. 国家自然科学基金重大项目培育计划(2021.01-2024.12)

3. 广东省自然科学基金面上项目(2019.10-2021.10)

4. 深圳市稳定支持计划(2020.09-2023.09)

学术成果:

  本人近年(2009~迄今)共发表SCI国际期刊133篇,H-index24被引用总次数: 1402次。其中代表性论文统计如下:(更新版详见实验室主页)

· Materials TodayIF32.072 1 (Invited review article)

· Nano Letters (IF12.727) 1

· ACS APPLIED MATERIALS & INTERFACES (IF: 8.901) 4

· Nanoscale (IF: 7.315) 8

· Applied Physics LettersIF3.4 23

· IEEE Electron Device Letter (IF: 3.639)  38

  相关研究成果并获得美国专利10项,中国台湾专利19项,中国专利公开8


代表著作目录列表 (Publication List)

代表作30SCI国际期刊: *:通讯作者

1. K. C. Chang, L. D. Hu, K. Qi, L. Li*, X. N. Lin, S. D Zhang*, Z. W. Wang, Y. C. Lai, H. J. Liu and T. P. Kuo, “Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors”, Nanoscale, 2021, 13(11), 5700-5705. (IF:7.315)

2. L. D. Hu, H. J. Lou*, W. T. Li, K. C. Chang* and X. N. Lin*, “Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure”, IEEE Transactions on Electron Devices, 2021, 68(1), 399-404.

3. K. Qi#, L. Lei#, K. C. Chang*, X. N. Lin*, H. J. Liu, Y. C. Lai, H. T. Zheng, G. Y. Huang and T. P. Kuo, “A supercritical removal method: the rapid elimination of impurities in polymethyl-methacrylate at near room temperature and a mechanism investigation of insulating property improvements”, Journal of Materials Chemistry C, 2020, 8(44), 15664-15668. (IF:7.059)

4. K. C. Chang, T. J. Dai, L. Lei*, X. N. Lin*, S. D. Zhang, Y. C. Lai, H. J. Liu and Y. E. Syu, “Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory”, Nanoscale, 2020, 12(43), 22020-22074. (IF:7.315)

5. L. Li, K. C. Chang*, X. N. Lin*, Y. C. Lai, R. Zhang and T. P. Kuo, “Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process”, Nanoscale, 2020, 12(29), 15721-15724. (IF:7.315)

6. L. Li, K. C. Chang*, C. Ye*, X. Lin, R. Zhang, Z. Xu, W. Xiong, Y. Zhou and T. P. Kuo, “An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: When Hafnium Meets ITO in Electrode”, Nanoscale, 2020, 12(5), 3267-3272. (IF: 7.315)

7. C. Ye, Z. Xu, K. C. Chang*, L. Li*, X. N. Lin, R. Zhang, Y. Zhou, W. Xiong and T. P. Kuo, “Hafnium Nanocrystals in HfTiO Compound Film Bring Excellent Performance for Flexible Selector in Memory Integration”, Nanoscale, 2019, 11(43), 20792-20796. (IF: 7.315)

8. L. Li, K. C. Chang*, X. N. Lin, R. Zhang and J. H. Lou, “Insulating Property Improvement of Polyimide in Devices by Low‐Temperature Supercritical Fluids”, Advanced Electronic Materials, 2019, 5(12), 1900580. (IF:6.831)

9. Y. T. Tseng, P. H. Chen, T. C. Chang*, K. C. Chang*, T. M. Tsai, C. C. Shih, H. C. Huang, C. C. Yang, C. Y. Lin, C. H. Wu, H. X. Zheng, S. D. Zhang and S. M. Sze, “Solving the Scaling Issue of Increasing Forming Voltage in Resistive Access Memory Using High-k Spacer Structure”, Advanced Electronic Materials, 2017, 3(9), 1700171. (IF:6.831)

10. P. H. Chen, T. C. Chang*, K. C. Chang*, T. M. Tsai, C. H. Pan, C. C. Shih, C. H. Wu, C. C. Yang, W. C. Chen, J. C. Lin, M. H. Wang, H. X. Zheng, M. C. Chen and S. M. Sze, “Effects of Plasma Treatment Time on Surface Characteristics of Indium-Tin-Oxide Film for Resistive Switching Storage Applications”, Applied Surface Science, 2017, 414, 224-229. (IF:5.141)

11. C. Y. Lin, P. H. Chen, T. C. Chang*, K. C. Chang*, S. D. Zhang, T. M. Tsai, C. H. Pan, M. C. Chen, Y. T. Su, Y. T. Tseng, Y. F. Chang, Y. C. Chen, H. C. Huang and S. M. Sze, “Attaining Resistive Switching Characteristics and Selector Properties by Varying Forming Polarities in a Single HfO2-based RRAM Device with a Vanadium Electrode”, Nanoscale, 2017, 9(25), 8586-8590. (IF:7.315)

12. Y. H. Lu, T. C. Chang*, L. H. Chen, Y. S. Lin, X. W. Liu, J. C. Liao, C. Y. Lin, C. H. Lien, K. C. Chang* and S. D. Zhang, “Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs”, IEEE Electron Device Letters, 2017, 38(7), 835-838. (IF:3.639)

13. C. Y. Lin, T. C. Chang*, K. J. Liu, L. H. Chen, J. Y. Tsai, C. E. Chen, Y. H. Lu, H. W. Liu, J. C. Liao and K. C. Chang*, “Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs”, IEEE Electron Device Letters, 2017, 38(6), 705-707. (IF:3.639)

14. P. Y. Liao, T. C. Chang*, Y. J. Chen, W. C. Su, B. W. Chen, L. H. Chen, T. Y. Hsieh, C. Y. Yang, K. C. Chang*, S. D. Zhang, Y. Y. Huang, H. M. Chang and S. C. Chiang, “The Effect of Device Electrode Geometry on Performance After Hot-Carrier Stress in Amorphous In-Ga-Zn-O Thin Film Transistors with Different Via-Contact Structures”, Applied Physics Letters, 2017, 110(20), 202103. (IF:3.4)

15. C. H. Wu, T. C. Chang*, T. M. Tsai, K. C. Chang*, T. J. Chu, C. H. Pan, Y. T. Su, P. H. Chen, S. K. Lin, S. J. Hu and S. M. Sze, “Effect of Charge Quantity in Conduction Mechanism of High- and Low-Resistance States During Forming Process in a One-Transistor-One-Resistor Resistance Random Access Memory”, Applied Physics Express, 2017, 10(5), 054101. (IF:2.758)

16. B. W. Chen, T. C. Chang*, K. C. Chang*, Y. J. Hung, S. P. Huang, H. M. Chen, P. Y. Liao, Y. H. Lin, H. C. Huang, H. C. Chiang, C. L. Yang, Y. Z. Zheng, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, T. T. J. Wang and T. C. Chang, “Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors”, ACS Applied Materials & Interfaces, 2017, 9(13), 11942-11949. (IF:8.901)

17. Y. C. Chien, T. C. Chang*, H. C. Chiang, H. M. Chen, Y. C. Tsao, C. C. Shih, B. W. Chen, P. Y. Liao, T. Y. Chu, Y. C. Yang, Y. J. Hung, T. M. Tsai and K. C. Chang*, “Roel of H2O Molecules in Passivation of a-InGaZnO Thin Film Transistors”, IEEE Electron Device Letters, 2017, 38(4), 469-472. (IF:3.639)

18. C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang*, P. H. Chen, S. W. Chang-Chien, M. C. Chen, H. C. Huang, H. Q. Wu and N. Deng, “Engineering Interface-Type Resistance Switching Based on Forming Current in ITO/Ga2O3: ITO/TiN Resistance Random Access Memory: Conduction Mechanisms, Temperature Effects, and Electrode Influence”, Applied Physics Letters, 2016, 109(18), 183509. (IF:3.4)

19. T. M. Tsai, K. C. Chang*, T. C. Chang*, R. Zhang, T. Wang, C. H. Pan, K. H. Chen, H. M. Chen, M. C. Chen, T. Y. Tseng, P. H. Chen, I. Lo, J. C. Zheng, J. C. Lou and S. M. Sze, “Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory”, IEEE Electron Device Letters, 2016, 37(4), 408-411. (IF:3.639)

20. K. C. Chang*, T. M. Tsai, T. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, M. C. Chen, H. C. Huang, W. Zhang, C. Y. Lin, Y. T. Tseng, H. C. Lin, J. C. Zheng and S. M. Sze, “Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid”, IEEE Electron Device Letters, 2015, 36(6), 558-560. (IF:3.639)

21. Y. T. Tseng, T. M. Tsai, T. C. Chang, C. C. Shih, K. C. Chang*, R. Zhang, K. H. Chen, J. H. Chen, Y. C. Li, C. Y. Lin, Y. C. Hung, Y. E. Syu, J. C. Zheng and S. M. Sze, “Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory”, Applied Physics Letters, 2015, 106(21), 213505. (IF:3.4)

22. K. C. Chang*, T. C. Chang, T. M. Tsai, R. Zhang, Y. C. Hung, Y. E. Syu, Y. F. Chang, M. C. Chen, T. J. Chu, H. L. Chen, C. H. Pan, C. C. Shih, J. C. Zheng and S. M. Sze, “Physical and chemical mechanisms in oxide-based resistance random access memory”, Nanoscale Research Letters, 2015, 10. (IF:3.559)

23. K. C. Chang*, T. M. Tsai, T. C. Chang, K. H. Chen, R. Zhang, Z. Y. Wang, J. H. Chen, T. F. Young, M. C. Chen, T. J. Chu, S. Y. Huang, Y. E. Syu, D. H. Bao and S. M. Sze, “Dual Ion Effect of The Lithium Silicate Resistance Random Access Memory”, IEEE Electron Device Letters, 2014, 35(5), 530-532. (IF:3.639)

24. K. C. Chang, R. Zhang, T. C. Chang, T. M. Tsai, T. J. Chu, H. L. Chen, C. C. Shih, C. H. Pan, Y. T. Su, P. J. Wu and Sze S.M, “High Performance, Excellent Reliability Multifuctional Graphene Oxide Doped Memristor Achieved by Self-Protective Compliance Current Structure”, 2014 IEEE International Electron Devices Meeting (IEDM).

25. K. C. Chang, J. H. Chen, T. M. Tsai, T. C. Chang *, S. Y. Huang, R. Zhang, K. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, K. H. Liao, Y. H. Tai, T. F. Young, S. M. Sze, C. F. Ai, M. C. Wang and J. W. Huang, “Improvement Mechanism of Resistance Random Access Memory with Supercritical CO2 Fluid Treatment”, Journal of Supercritical Fluids, 2014, 85, 183-189. (IF:3.536)

26. K. C. Chang, J. W. Huang*, T. C. Chang, T. M. Tsai, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, S. Y. Huang, Y. C. Pan, H. C. Huang, Y. E. Syu, D. S. Gan, D. H. Bao and S. M. Sze, “Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer”, Nanoscale Research Letters, 2013, 8, 523. (IF:3.559)

27. K. C. Chang, T. M. Tsai*, R. Zhang, T. C. Chang, K. H. Chen, J. H. Chen, T. F. Young, J. C. Lou, T. J. Chu, C. C. Shih, J. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, M. C. Chen, J. J. Wu, Y. Hu and S. M. Sze, “Electrical Conduction Mechanism of Zn:SiOx Resistance Random Access Memory with Supercritical CO2 Fluid Process”, Applied Physics Letters, 2013, 103(8), 083509. (IF:3.4)

28. K. C. Chang*, C. H. Pan, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih and T. J. Chu, “Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment”, IEEE Electron Device Letters, 2013, 34(5), 617-619. (IF:3.639)

29. K. C. Chang *, R. Zhang, T. C. Chang, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang and Y. C. Pan, “Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices”, IEEE Electron Device Letters, 2013, 34(5), 677-679. (IF:3.639)

30. K. C. Chang*, T. M. Tsai, T. C. Chang, H. H. Wu, K. H. Chen, J. H. Chen, T. F. Young, T. J. Chu, J. Y. Chen and C. H. Pan, “Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices”, IEEE Electron Device Letters, 2013, 34 (4), 511-513. (IF:3.639)